MOS-hydride epitaxy in photonics and electronics materials technology
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The book discusses the theoretical and practical aspects of Mos-Hydrid epitaxia (MosGE)-one of the most flexible and productive modern methods of obtaining semiconductor structures. The physico-chemical foundations of the method are briefly set out, a description of high-performance technological equipment for the implementation of the MosGE and methods for monitoring the growth of the epitaxial layers of In Situ is given, and the issues of processing processes are raised. The practical aspects of the implementation of the method are discussed in detail on the example of the formation of the epitaxial structures of semiconductors AIIIBV, AIIBVI and solid solutions based on them-the main materials of modern optoelectronics and IR technology. Significant attention is paid to the formation of nanosmal epitaxial structures and heterostructures based on nitrides of elements of group III, the technology of which has been rapid development in recent years. The issues of adaptation of the MosGE method to obtain a number of new materials of electronic technology are considered. The book is intended for specialists in the field of technology of semiconductor materials, may be useful to graduate students and students of the corresponding specialties
Author:
Author:Мармалюк А.А., Акчурин Р.Х.
Cover:
Cover:Soft
Category:
- Category:Arts & Photography
- Category:Science & Math
Publication language:
Publication Language:Russian
ISBN:
ISBN:978-5-94836-521-3
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