Radiation effects in silicon integrated circuits for space applications

In the monograph, the influence of ionizing radiation (AI), mainly outer space, on the characteristics of micro and nanoelectronics products. The foundations of the physics of interactions of AI with semiconductors, a change in the electrophysical parameters of instrument structures as a result of the formation of nanoscale defects under the action of AI, dose ionization effects in the Si / SiO2 structure and their effect on the characteristics of the devices and microcircuits, the features of radiation tests of products made by MOP-, CMOS, as well as on bipolar technology, for resistance to the effects of low-intensity AI, single events in products of micro and nanoelectronics when exposed to individual charged particles.
For technical specialists working in the field of electronics, as well as for students and graduate students