Microwave transistors on wide-bandgap semiconductors
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The book is a textbook on the physical principles and technology of transistors on wide-bandgap semiconductors. It covers the properties of two-dimensional electron gas and the physics of heterojunctions, mainly of the AlGaN/GaN type. An overview of transistor structures based on the wide-bandgap semiconductor GaN is provided. Structures of transistors on diamond and silicon carbide are also discussed. Substrates made of sapphire, silicon carbide, and other materials used for creating heterostructures are examined. The methods of manufacturing heterojunctions using metal-organic compound epitaxy and molecular beam epitaxy are analyzed in detail. Requirements for ohmic contacts and Schottky barriers are discussed, which are used in creating heteroepitaxial field-effect transistors with high electron mobility in the channel (HEMT). The technology of diamond transistors is also considered. A detailed overview of methods for controlling technological processes used in transistor manufacturing is provided. Methods for measuring the main parameters of microwave transistors and controlling transistor reliability are discussed. The book is intended for students studying in the field of 210100 'Electronics and Nanoelectronics'. It will also be useful for graduate students, postgraduates, engineers, and researchers specializing in the development and application of solid-state electronics products.
Author:
Author:Vasilyev Andrey Georgievich, Kolkovsky Yuri Vladimirovich, Kontsevoy Yuliy Abramovich
Cover:
Cover:hardcover
Category:
- Category:Computer & Technology
- Category:Science & Math
Publication language:
Publication Language:Russian
Paper:
Paper:offset
Dimensions:
Dimensions:22x15x1.5 cm
Series:
Series:World of Electronics
ISBN:
ISBN:978-5-94836-290-8
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