Design and technological features of submicron MOS transistors
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The book discusses the features of working with submicron MOS transistors, describes the directions of development and limitations of transistor scaling methods, presents requirements for subgate dielectrics technology and their formation, various constructions of source-drain regions of MOSFETs, and technological processes for creating fine-grained doped layers. The problems of scaling element sizes into the submicron range and the peculiarities of technological processes on the reliability and durability of submicron MOS transistors are considered. Data on the influence of manufacturing processes of submicron VLSI (plasma processing, ion implantation, and imaging transfer operations) on the degradation of subgate dielectric, and thus on the yield level, reliability, and durability of finished products are presented. The book is intended for specialists in the field of designing and developing CMOS VLSI manufacturing technology, as well as for senior students, graduate students, and technical university professors. 2nd edition, corrected.
Author:
Author:Krasnikov Gennady Yakovlevich
Cover:
Cover:hardcover
Category:
- Category:Computer & Technology
- Category:Science & Math
Publication language:
Publication Language:Russian
Paper:
Paper:offset
Dimensions:
Dimensions:25x18x3.7 cm
Series:
Series:World of Electronics
ISBN:
ISBN:978-5-94836-289-2
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